Two bit non-volatile electrically erasable and programmable semiconductor memor ycell utilizing asymmetrical charge trapping
A Standard patent application filed on 02 August 1998 credited to Eitan, Boaz

Details

Application number :
85589  
Application type :
Standard  
Application status :
LAPSED  
Under opposition :
No  
Proceeding type :
 
Invention title :
Two bit non-volatile electrically erasable and programmable semiconductor memor ycell utilizing asymmetrical charge trapping  
Inventor :
Eitan, Boaz  
Agent name :
 
Address for service :
 
Filing date :
02 August 1998  
Associated companies :
 
Applicant name :
Saifun Semiconductors Ltd.  
Applicant address :
 
Old name :
 
Original Source :
Go  

Same Inventor