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Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping
A Standard patent application filed on 24 June 1997 credited to Eitan, Boaz
Details
Application number :
31883
Application type :
Standard
Application status :
LAPSED
Under opposition :
No
Proceeding type :
Invention title :
Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping
Inventor :
Eitan, Boaz
Agent name :
Address for service :
Filing date :
24 June 1997
Associated companies :
Applicant name :
Saifun Semiconductors Ltd.
Applicant address :
Old name :
Original Source :
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