Method of low temperature plasma enhanced chemical vapor deposition of tin ilm over titanium for use in via level applications
A Standard patent application filed on 14 January 1998 credited to Hillman, Joseph T ; Ameen, Michael S.

Details

Application number :
59176  
Application type :
Standard  
Application status :
LAPSED  
Under opposition :
No  
Proceeding type :
 
Invention title :
Method of low temperature plasma enhanced chemical vapor deposition of tin ilm over titanium for use in via level applications  
Inventor :
Hillman, Joseph T ; Ameen, Michael S.  
Agent name :
 
Address for service :
 
Filing date :
14 January 1998  
Associated companies :
 
Applicant name :
Tokyo Electron Arizona, Inc.  
Applicant address :
 
Old name :
 
Original Source :
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Same Inventor