Method of growth of thin film layer for use in a composite semiconductor
A Standard patent application filed on 08 September 1986 credited to Matsui, Yuichi
Details
Application number :
62456
Application type :
Standard
Application status :
CEASED
Under opposition :
No
Proceeding type :
Invention title :
Method of growth of thin film layer for use in a composite semiconductor
Inventor :
Matsui, Yuichi
Agent name :
Davies Collison Cave
Address for service :
Level 15 1 Nicholson Street MELBOURNE VIC 3000
Filing date :
08 September 1986
Associated companies :
Applicant name :
Sumitomo Electric Industries, Ltd.
Applicant address :
15, Kitahama 5-chome, Higashi-Ku, Osaka-shi, Osaka-fu, Japan