Silicon carbide single crystal, and method and apparatus for producing the same

Application number :: 2002216390
Application type :: Standard
Application status :: LAPSED
Under opposition :: No
Proceeding type :
Invention title :: Silicon carbide single crystal, and method and apparatus for producing the same
Inventor :: Maruyama, Takayuki ; Endo, Shigeki
Agent name :
Address for service :
Filing date :: 21 December 2001
Associated companies :
Applicant name :: BRIDGESTONE CORPORATION
Applicant address :: 10-1, Kyobashi 1-chome, Chuo-ku, Tokyo 104-0031
Old name :
Original Source :: Go

Silicon carbide single crystal, and method and apparatus for producing the same A Standard patent application filed on 21 December 2001 credited to Maruyama, Takayuki ; Endo, Shigeki