Iii nitride compound semiconductor element and electrode forming method
A Standard patent application filed on 19 February 2001 credited to Asai, Makoto ; Murakami, Masanori ; Koide, Yasuo ; Uemura, Toshiya ; Shibata, Naoki

Details

Application number :

2001232341  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Iii nitride compound semiconductor element and electrode forming method  

Inventor :

Asai, Makoto ; Murakami, Masanori ; Koide, Yasuo ; Uemura, Toshiya ; Shibata, Naoki  

Agent name :

 

Address for service :

 

Filing date :

19 February 2001  

Associated companies :

 

Applicant name :

Toyoda Gosei Co. Ltd.  

Applicant address :

 

Old name :

 

Original Source :

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