Amorphization of substrate to prevent silicide encroachment into channel region of field effect transistor
A Standard patent application filed on 12 November 1999 credited to Bai, Gang ; Tsai, Julie A. ; Jan, Chia-Hong ; Jacob, Pauline N.

Details

Application number :

16217  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Amorphization of substrate to prevent silicide encroachment into channel region of field effect transistor  

Inventor :

Bai, Gang ; Tsai, Julie A. ; Jan, Chia-Hong ; Jacob, Pauline N.  

Agent name :

 

Address for service :

 

Filing date :

12 November 1999  

Associated companies :

 

Applicant name :

Intel Corporation  

Applicant address :

 

Old name :

 

Original Source :

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