Ultra thin oxynitride and nitride/oxide stacked gate dielectrics fabricated by high pressure technology
A Standard patent application filed on 26 October 1999 credited to Bloom, John A. ; Acker, Bruce T. ; Evans, Robert K. ; Kwong, Dim-Lee

Details

Application number :

15991  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Ultra thin oxynitride and nitride/oxide stacked gate dielectrics fabricated by high pressure technology  

Inventor :

Bloom, John A. ; Acker, Bruce T. ; Evans, Robert K. ; Kwong, Dim-Lee  

Agent name :

 

Address for service :

 

Filing date :

26 October 1999  

Associated companies :

 

Applicant name :

Gasonics International  

Applicant address :

 

Old name :

 

Original Source :

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