Heterojunction bipolar transistor having wide bandgap, low interdiffusion base-emitter junction
A Standard patent application filed on 08 September 1998 credited to Hashemi, Majid M. ; El-Sharawy, El-Badawy Amien

Details

Application number :

93075  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Heterojunction bipolar transistor having wide bandgap, low interdiffusion base-emitter junction  

Inventor :

Hashemi, Majid M. ; El-Sharawy, El-Badawy Amien  

Agent name :

 

Address for service :

 

Filing date :

08 September 1998  

Associated companies :

 

Applicant name :

National Scientific Corp., The  

Applicant address :

 

Old name :

 

Original Source :

Go  

Same Inventor

• Monolithic inductor