Integrated circuit having both low voltage and high voltage mos transistors and method of making
A Standard patent application filed on 21 October 1998 credited to Misium, George R
;
Hattangady, Sunil V
Details
Application number :
89451
Application type :
Standard
Application status :
SEALED
Under opposition :
No
Proceeding type :
Invention title :
Integrated circuit having both low voltage and high voltage mos transistors and method of making
Inventor :
Misium, George R
;
Hattangady, Sunil V
Agent name :
Collison & Co
Address for service :
GPO Box 2556 ADELAIDE SA 5001
Filing date :
21 October 1998
Associated companies :
Applicant name :
Texas Instruments Incorporated
Applicant address :
13500 North Central Expressway Dallas Texas United States Of America