Method of etching doped silicon dioxide with selectivity to undoped silicon dioxide with a high density plasma etcher
A Standard patent application filed on 23 July 1998 credited to Ko, Kei-Yu

Details

Application number :

86642  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Method of etching doped silicon dioxide with selectivity to undoped silicon dioxide with a high density plasma etcher  

Inventor :

Ko, Kei-Yu  

Agent name :

 

Address for service :

 

Filing date :

23 July 1998  

Associated companies :

 

Applicant name :

Micron Technology, Inc.  

Applicant address :

 

Old name :

 

Original Source :

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