Selectively doped trench device isolation
A Standard patent application filed on 03 August 1999 credited to Yeng, Rongsheng ; Kao, David Y.

Details

Application number :

15160  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Selectively doped trench device isolation  

Inventor :

Yeng, Rongsheng ; Kao, David Y.  

Agent name :

 

Address for service :

 

Filing date :

03 August 1999  

Associated companies :

 

Applicant name :

Micron Technology, Inc.  

Applicant address :

 

Old name :

 

Original Source :

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