High density memory and double word ferroelectric memory cell for constructing the same
A Standard patent application filed on 21 January 1997 credited to Womack, Richard
;
Evans, Joseph T. Jr.
Details
Application number :
18329
Application type :
Standard
Application status :
LAPSED
Under opposition :
No
Proceeding type :
Invention title :
High density memory and double word ferroelectric memory cell for constructing the same