A process for fabricating semiconductor devices with shallowly doped regions using dopant compounds containing elements of high solid solubility
A Standard patent application filed on 19 January 1996 credited to Tien, Tien ; Ling, Peiching

Details

Application number :

48999  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

A process for fabricating semiconductor devices with shallowly doped regions using dopant compounds containing elements of high solid solubility  

Inventor :

Tien, Tien ; Ling, Peiching  

Agent name :

 

Address for service :

 

Filing date :

19 January 1996  

Associated companies :

 

Applicant name :

Advanced Material Engineering Research  

Applicant address :

 

Old name :

 

Original Source :

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