Process for anisotropic etching of semiconductor materials using an electrochemical etch-stop
A Standard patent application filed on 24 February 1989 credited to Schnakenberg, Uwe ; Benecke, Wolfgang ; Findler, Gunther ; Willmann, Martin ; Marek, Jiri ; Lochel, Bernd

Details

Application number :

31844  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Process for anisotropic etching of semiconductor materials using an electrochemical etch-stop  

Inventor :

Schnakenberg, Uwe ; Benecke, Wolfgang ; Findler, Gunther ; Willmann, Martin ; Marek, Jiri ; Lochel, Bernd  

Agent name :

 

Address for service :

 

Filing date :

24 February 1989  

Associated companies :

 

Applicant name :

Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V.  

Applicant address :

 

Old name :

 

Original Source :

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