A method and apparatus for forming a high quality low temperature silicon nitride layer
A Standard patent application filed on 19 December 2003 credited to Chen, Aihua (Steven) ; Wang, Shulin ; Sanchez, Errol Antonio C.

Details

Application number :

2003303136  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

A method and apparatus for forming a high quality low temperature silicon nitride layer  

Inventor :

Chen, Aihua (Steven) ; Wang, Shulin ; Sanchez, Errol Antonio C.  

Agent name :

 

Address for service :

 

Filing date :

19 December 2003  

Associated companies :

 

Applicant name :

APPLIED MATERIALS, INC.  

Applicant address :

3050 Bowers Avenue, Santa Clara, CA 95054  

Old name :

 

Original Source :

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