Room temperature wet chemical growth process of sio based oxides on silicon
A Standard patent application filed on 17 March 2000 credited to Faur, Maria
;
Faur, Mircea
;
Faur, Horia M.
;
Bailey, Sheila G.
;
Flood, Dennis J.
Details
Application number :
37592
Application type :
Standard
Application status :
LAPSED
Under opposition :
No
Proceeding type :
Invention title :
Room temperature wet chemical growth process of sio based oxides on silicon
Inventor :
Faur, Maria
;
Faur, Mircea
;
Faur, Horia M.
;
Bailey, Sheila G.
;
Flood, Dennis J.