Field effect transistor using insulator-semiconductor transition material layer as channel material and method of manufacturing the same
A Standard patent application filed on 30 December 2003 credited to Chae, Byung-Gyu
;
Kang, Kwang-Yong
;
Kim, Hyun-Tak
;
Youn, Doo-Hyeb
Details
Application number :
2003288774
Application type :
Standard
Application status :
LAPSED
Under opposition :
No
Proceeding type :
Invention title :
Field effect transistor using insulator-semiconductor transition material layer as channel material and method of manufacturing the same