Details

Application number :
2003288774  
Application type :
Standard  
Application status :
LAPSED  
Under opposition :
No  
Proceeding type :
 
Invention title :
Field effect transistor using insulator-semiconductor transition material layer as channel material and method of manufacturing the same  
Inventor :
Chae, Byung-Gyu ; Kang, Kwang-Yong ; Kim, Hyun-Tak ; Youn, Doo-Hyeb  
Agent name :
 
Address for service :
 
Filing date :
30 December 2003  
Associated companies :
 
Applicant name :
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE  
Applicant address :
161, Gajeong-dong, Yusong-gu, 305-350 Daejeon-city  
Old name :
 
Original Source :
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