Method for forming a nickel silicide layer on a silicon substrate
A Standard patent application filed on 25 April 2003 credited to Chi, Dongzhi ; Lahiri, Syamal Kumar ; Chua, Soo Jin ; Lee, Rinus Tek Po

Details

Application number :

2003266984  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Method for forming a nickel silicide layer on a silicon substrate  

Inventor :

Chi, Dongzhi ; Lahiri, Syamal Kumar ; Chua, Soo Jin ; Lee, Rinus Tek Po  

Agent name :

 

Address for service :

 

Filing date :

25 April 2003  

Associated companies :

 

Applicant name :

AEROJET-GENERAL CORPORATION  

Applicant address :

P.O. Box 97009 Redmond, WA 98073-9709 USA  

Old name :

 

Original Source :

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