Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy
A Standard patent application filed on 15 July 2003 credited to Haskell, Benjamin A.
;
Speck, James S.
;
Denbaars, Steven P.
;
Fini, Paul T.
;
Nakamura, Shuji
;
Craven, Michael D.
Details
Application number :
2003259125
Application type :
Standard
Application status :
LAPSED
Under opposition :
No
Proceeding type :
Invention title :
Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy
Inventor :
Haskell, Benjamin A.
;
Speck, James S.
;
Denbaars, Steven P.
;
Fini, Paul T.
;
Nakamura, Shuji
;
Craven, Michael D.
Agent name :
Address for service :
Filing date :
15 July 2003
Associated companies :
Applicant name :
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Applicant address :
1111 Franklin Street, 12th Floor, Oakland, CA 94607