A method for forming conformal nitrified tantalum silicide films by thermal cvd followed by nitridation
A Standard patent application filed on 24 April 2003 credited to Hillman, Joseph T.
;
Ludviksson, Audunn
Details
Application number :
2003247347
Application type :
Standard
Application status :
LAPSED
Under opposition :
No
Proceeding type :
Invention title :
A method for forming conformal nitrified tantalum silicide films by thermal cvd followed by nitridation
Inventor :
Hillman, Joseph T.
;
Ludviksson, Audunn
Agent name :
Address for service :
Filing date :
24 April 2003
Associated companies :
Applicant name :
TOKYO ELECTRON LIMITED
Applicant address :
TBS Broadcast Center, 3-6, Akasaka 5-chome, Minato-ku, Tokyo 107