Thick buffer region design to improve igbt self-clamped inductive switching (scis) energy density and device manufacturability
A Standard patent application filed on 16 January 2003 credited to Czeck, Bernard J.
;
Lange, Douglas
;
Baran, Robert D.
;
Yedinak, Joseph A.
;
Wojslawowicz, Jack E.
Details
Application number :
2003236578
Application type :
Standard
Application status :
LAPSED
Under opposition :
No
Proceeding type :
Invention title :
Thick buffer region design to improve igbt self-clamped inductive switching (scis) energy density and device manufacturability
Inventor :
Czeck, Bernard J.
;
Lange, Douglas
;
Baran, Robert D.
;
Yedinak, Joseph A.
;
Wojslawowicz, Jack E.
Agent name :
Address for service :
Filing date :
16 January 2003
Associated companies :
Applicant name :
FAIRCHILD SEMICONDUCTOR CORPORATION
Applicant address :
82 Running Hill Road, MS 35-4E, South Portland, ME 04106