Semiconductor devices formed of iii-nitride compounds, lithium-niobate-tantalate, and silicon carbide
A Standard patent application filed on 14 February 2003 credited to Doolittle, William Alan

Details

Application number :

2003217412  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Semiconductor devices formed of iii-nitride compounds, lithium-niobate-tantalate, and silicon carbide  

Inventor :

Doolittle, William Alan  

Agent name :

 

Address for service :

 

Filing date :

14 February 2003  

Associated companies :

 

Applicant name :

GEORGIA TECH RESEARCH CORPORATION  

Applicant address :

505 Tenth Street, NW, Atlanta, GA 30332-0415  

Old name :

 

Original Source :

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