Method for forming an improved metal silicide contact to a silicon-containing conductive region
A Standard patent application filed on 20 December 2002 credited to Wieczorek, Karsten ; Kahlert, Volker ; Horstmann, Manfred

Details

Application number :

2002351407  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Method for forming an improved metal silicide contact to a silicon-containing conductive region  

Inventor :

Wieczorek, Karsten ; Kahlert, Volker ; Horstmann, Manfred  

Agent name :

 

Address for service :

 

Filing date :

20 December 2002  

Associated companies :

 

Applicant name :

ADVANCED MICRO DEVICES, INC.  

Applicant address :

One AMD Place, Mail Stop 68, P.O. Box 3453, Sunnyvale, CA 94088-3453  

Old name :

 

Original Source :

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