Silicon carbide power mosfets having a shorting channel and methods of fabrication them
A Standard patent application filed on 02 October 2001 credited to Agarwal, Anant ; Palmour, John W ; Ryu, Sei-Hyung ; Das, Mrinal Kanti ; Singh, Ranbir ; Lipkin, Lori A.

Details

Application number :

2001296455  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Silicon carbide power mosfets having a shorting channel and methods of fabrication them  

Inventor :

Agarwal, Anant ; Palmour, John W ; Ryu, Sei-Hyung ; Das, Mrinal Kanti ; Singh, Ranbir ; Lipkin, Lori A.  

Agent name :

 

Address for service :

 

Filing date :

02 October 2001  

Associated companies :

 

Applicant name :

Cree, Inc.  

Applicant address :

 

Old name :

 

Original Source :

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